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Fengyan cable product quality service commitment, Jinzhou cable factory in order to ensure the quality of products made the following commitments

Release time:

2018-09-29

After the contract is signed, users are welcome to send representatives to the factory for production supervision and factory inspection. We actively cooperate with the user representatives and provide convenience for work and life. For the opinions on cable manufacturing quality put forward by the user representatives, we will make timely improvements in accordance with the requirements of the contract signed by both parties.

Fengyan cable product quality service commitment, Jinzhou cable factory in order to ensure the quality of products made the following commitments

Japan Industrial Technology Research Institute (hereinafter referred to as "comprehensive research") has developed a new material, through the combination of single-layer carbon nanotubes (CNT) and copper (Cu), to achieve the same electrical conductivity as copper, and about 100 times the current carrying capacity of copper. The institute said that this CNT-Cu composite material can not only pass large currents, but also has light weight and high temperature resistance, so it can be used as a wiring material for ultra-small high-performance semiconductor chips. Conventionally, a metal such as copper, aluminum (Al), or gold (Au) has been generally used as a material for overall wiring and inter-chip wiring of a semiconductor chip. However, although the electrical conductivity of these metals is high, the current carrying capacity is not necessarily large. When a high voltage above a certain value is applied, this voltage will cause the atomic structure to collapse, which will cause a sharp increase in resistance and eventually cause the wire to break. In terms of conductivity and current carrying capacity, the new material combines the high current carrying capacity of CNT and the high conductivity of Cu (a). Previously, materials with both high load capacity and high conductivity have not been found, while CNT-Cu composite materials achieve both properties (B). In terms of application, the amount of current required for wiring of a semiconductor chip or the like is gradually increasing with the progress of miniaturization technology. According to the comprehensive research institute, by 2015, the required current carrying capacity will reach 1 million (106)A/cm2, which cannot be achieved by Cu and Au. However, "nano-carbon materials" such as CNT and graphene have a current carrying capacity of up to 1 billion (109)A/cm2. This is because carbon atoms have a strong coupling ability, even if a high voltage is applied, it is difficult to cause the atomic structure to collapse. However, the electrical conductivity of this material is less than 1/100 of that of Cu and Au. Previously, researchers have not found a material with a current carrying capacity equivalent to CNT and a conductivity equivalent to Cu. CNTs inhibit diffusion of Cu CNT-Cu composites, made from a combination of CNTs and Cu, have achieved both properties for the first time. Its current carrying capacity is 6.3 × 108A/cm2, which is about 100 times as high as that of Cu. The reason why the new material can achieve such a high current carrying capacity is that CNT can inhibit the diffusion of Cu. In this CNT-Cu composite material, CNT and Cu form a structure like "reinforced concrete", and CNT plays a role of enhancing the "strength" of Cu under high voltage. At room temperature, the electrical conductivity of this composite is comparable to that of Cu. However, even at a high temperature of about 200 ℃, the conductivity of the new material will not be significantly reduced, which is even better than Cu. The electrical conductivity of the CNT-Cu composites with Cu at different temperatures was investigated. Compared with Cu, the electrical conductivity of CNT-Cu composites is less changed by temperature. According to the introduction of the production comprehensive research, the production process of the new material is basically the electroplating treatment of CNT in the solution containing Cu ions. The key point is that the CNT is slowly plated in an organic-based solution at a current density of 1m ~ 5mA/cm2, rather than the rapid copper plating in an aqueous solution. Thus, the inside of the CNT structure can be filled with Cu. An overview of the manufacturing process for CNT-Cu composite materials. The vertical alignment single-layer CNT developed by the industry and Japan's Rui Weng and others is changed to horizontal alignment backward, and copper plating is carried out in organic solution and aqueous solution successively. At present, there is a price gap of more than 1000 times. The problem with this composite material is that the cost of single-layer CNT is still very high. At present, the cost of single-layer CNT is 1000 yen to 10000 yen/g (depending on the purity), which is about the same as 4300 yen/g of Au. However, the cost of Cu is only about 0.76 yen/g, and there is a great price gap between single-layer CNT and it. In the manufacture of single-layer CNT, the Institute adopted the "Super Growth Method" jointly developed by the Institute and Japanese companies such as Rui Weng, which is a process that can manufacture high-purity single-layer CNT. Rui Weng plans to use the super-speed growth method to formally mass produce single-layer CNT from 2015. It is possible to reduce the manufacturing cost to about 10 yen/g in the future. Industry Research said that in the future, it will jointly develop specific uses of new materials with manufacturers to promote practical use.

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